Application of sputter etching treatment to the formation of semiconducting silicide film on Si substrate
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Co silicide formation on SiGeC/Si and SiGe/Si layers
The reaction of Co with epitaxial SiGeC/Si layers is investigated and compared to the reaction of Co with SiGe/Si layers. The sequence of phase formation is the same as the reaction of Co with monocrystalline Si, however, cobalt disilicide is formed at much higher temperatures. The presence of C further delays the disilicide formation, as a result of C accumulation at the silicide/substrate int...
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ژورنال
عنوان ژورنال: Transactions of the Materials Research Society of Japan
سال: 2012
ISSN: 1382-3469,2188-1650
DOI: 10.14723/tmrsj.37.245